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Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Author(s): Li Zhiwei | Zhang Biao | Wang Jun | Liu Jianming | Liu Xianglin | Yang Shaoyan | Zhu Qinsheng | Wang Zhanguo

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 6;
Issue: 1;
Start page: 193;
Date: 2011;
Original page

Abstract The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
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