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Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Author(s): Xu Pengfa | Lu Jun | Chen Lin | Yan Shuai | Meng Haijuan | Pan Guoqiang | Zhao Jianhua

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 6;
Issue: 1;
Start page: 125;
Date: 2011;
Original page

Abstract MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature T t, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated T t of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe