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The new approach to the creation of the nonvolatile memory based on Si-MOS-transistors

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Author(s): Gulyaev Yu. V. | Zhdan A. G. | Chucheva G. V.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 3;
Start page: 3;
Date: 2011;
Original page

Keywords: Si-MOSFETs | electron-ion interaction | nonvolatile memory | neutral associates (ion+electron)

ABSTRACT
A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and can vary widely. Time of recording-erasing is determined by the size of the transistor and makes some milliseconds. Obtained results allow to suggest, that compared with the traditional flash memory, such storage device will be more reliable and durable.