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Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

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Author(s): Smyntyna V. A. | Kulinich O. A. | Yatsunskii I. R. | Sviridova O. V. | Marchuk I. A.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 5;
Start page: 39;
Date: 2011;
Original page

Keywords: polycrystalline silicon | current transport | "metal — p-Si" contact

ABSTRACT
Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.
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