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Atomic scale investigation of silicon nanowires and nanoclusters

Author(s): Roussel Manuel | Chen Wanghua | Talbot Etienne | Lardé Rodrigue | Cadel Emmanuel | Gourbilleau Fabrice | Grandidier Bruno | Stiévenard Didier | Pareige Philippe

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 6;
Issue: 1;
Start page: 271;
Date: 2011;
Original page

Abstract In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.
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